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Changchun Institute of Optics and Fine Mechanics has developed a high brightness HiBBEE non-uniform waveguide semiconductor laser

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2025-03-18 14:14:23
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High brightness semiconductor lasers have extremely important applications in fields such as laser radar. Traditional semiconductor lasers face challenges such as large vertical divergence angle, elliptical beam output, multiple lateral modes, and poor beam quality, which limit the direct application of high brightness semiconductor lasers.

In response to this challenge, the team from the Bimberg Sino German Green Photonics Research Center at Changchun Institute of Optics and Fine Mechanics has adopted a high brightness vertical wide area edge emission (HiBBEE) structure in the vertical direction, using the photonic bandgap effect to replace the traditional total reflection principle for light field limitation, improving the size of the optical mode, and reducing the vertical divergence angle of semiconductor lasers; At the same time, in the lateral direction, non-uniform waveguides were used to suppress lateral higher-order modes, improve the lateral beam quality of semiconductor lasers, and optimize the design and preparation of HiBBEE non-uniform waveguide semiconductor lasers. At a current of 1.5A, the full width at half maximum of the vertical and lateral divergence angles is still as low as 8.6 ° and 5.1 °, while maintaining the fundamental mode output. The brightness is improved by 1.5 times compared to similar devices.

 


Schematic diagram of HiBBEE non-uniform waveguide semiconductor laser structure

 


HiBBEE non-uniform waveguide semiconductor laser brightness


This high brightness HiBBEE non-uniform waveguide semiconductor laser can significantly reduce the application cost of semiconductor lasers and has broad application prospects.

The first author of the article is Wu Chengkun, a doctoral student at the Sino German Center, and the corresponding author is researcher Tian Sicong. The research was supported by the Sino German International Cooperation Project of the National Natural Science Foundation of China (Research on 1250nm High Brightness Quantum Dot Laser for Lidar, No. 62061136010).

Source: opticsky

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