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With the explosive growth of data traffic, the market is extremely eager for hybrid photonic integrated circuits that can combine various optical components on a single chip.Silicon is an excellent material for photonic integrated circuits (PICs), but achieving high-performance laser sources in silicon still poses challenges. The monolithic integration of III-V quantum dot (QD) lasers on silicon i...
Rutronik has expanded its optoelectronic product portfolio by introducing green and blue laser diodes packaged in metal cans TO38 and TO56 using AM OSRAM. They leave a deep impression with improved beam quality and stricter electro-optic tolerances. The power level of the laser diode ranges from 10mW to 100mW. Diodes such as PLT3 520FB and PLT5 450GB are now available on the market.The flexibility...
Recently, a Japanese research team has developed a vertical deep ultraviolet emitting semiconductor laser device based on AlGaN, which is expected to be applied in laser processing, biotechnology, and medical fields.As is well known, ultraviolet (UV) is an electromagnetic wave with a wavelength range of 100 to 380nm. These wavelengths can be divided into three regions: UV-A (315-380 nm), UV-B (280...
Recently, Professor Zhang Xiaohong and Professor Peng Jun from the Functional Nanomaterials and Soft Materials Research Institute (FUNSOM) of Suzhou University, along with Professor Mohammad Khaja Nazeeruddin, Professor Paul J. Dyson, Professor Zhaofu Fei, and Professor Ding Yong from North China Electric Power University, collaborated to publish their research findings on Dopant additive synergy ...
Recently, the team of Situ Guohai and Guo Jinying from the Aerospace Laser Technology and Systems Department of the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, and the School of Microelectronics at Shanghai University collaborated to propose a terahertz phase controlled programmable metasurface design scheme based on free carrier plasma dispersion effect. The rela...