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Significant progress made in 808nm high-power semiconductor laser chips

1101
2024-06-14 14:41:24
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The R&D team of Xi'an Lixin Optoelectronics Technology Co., Ltd. (hereinafter referred to as "Lixin Optoelectronics") has made significant progress in 808nm high-power semiconductor laser chips through continuous technological breakthroughs.

808nm semiconductor laser, as an ideal and efficient solid-state laser pump source, plays an important role in advanced manufacturing, mechanical processing, medical beauty, laser display, scientific research, aerospace and other fields. With the increasing demand for efficient laser solutions in the market, high-power and high-efficiency laser chips have become a key factor driving industry development. The company's R&D team has improved the slope efficiency, high-temperature characteristics, and output power of 808nm high-power semiconductor laser chips through structural upgrades and epitaxial technology optimization; By optimizing the cavity surface coating technology, the damage threshold COMD of the chip cavity surface is increased, thereby significantly improving the reliability of the chip.

The test results show that the high-power 808nm COS laser chip packaged in vertical core optoelectronic packaging has an output power of up to 81W and a maximum photoelectric conversion efficiency (PCE) of 57% at QCW 86A, which reflects the excellent high-temperature characteristics, high damage threshold, and high reliability of the product.

The realization of this innovative achievement highlights the profound technological accumulation and outstanding innovative strength of Lixin Optoelectronics in the field of high-power semiconductor laser chips. It not only enhances the company's competitive position in the domestic market, but also promotes the advancement of solid-state laser technology using such high-power laser chips as pump sources.

Source: Lixin Optoelectronics

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