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Summary:To filter out infrared light from the driving light source in the extreme ultraviolet lithography (EUVL) light source system, a rectangular grating structure needs to be fabricated on the surface of the collection mirror. However, the collection mirror grating usually undergoes deformation during the manufacturing process, resulting in a decrease in filtering efficiency. The process errors...
Recently, the Los Alamos National Laboratory (LANL) in the United States has developed a method for quantum light emitters, which stacks two different atomic thin materials together to achieve a light source that generates circularly polarized single photon streams. These light sources can also be used for various quantum information and communication applications.According to Han Htoon, a researc...
Chip giant Intel announced that it has completed the assembly work of the world's first commercial high numerical aperture (NA) extreme ultraviolet lithography (EUV) scanner. This device greatly improves the resolution and feature scaling of next-generation chips by changing the optical design used to project printed images onto silicon wafers.This lithography equipment weighing 150 tons has been ...
A group of network, semiconductor, and optical companies formed the LPO MSA to develop the network equipment and optical module specifications required to implement a wide ecosystem of interoperable LPO solutions.These specifications address the industry challenges of reducing power consumption, cost, and latency while improving the reliability of high-speed optical interconnections.Accelink, AMD...
Recently, the semiconductor industry has adopted Extreme Ultraviolet Lithography (EUVL) technology. This cutting-edge photolithography technology is used for the continuous miniaturization of semiconductor devices to comply with Moore's Law. Extreme ultraviolet lithography (EUVL) has become a key technology that utilizes shorter wavelengths to achieve nanoscale feature sizes with higher accuracy a...